Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160 IRHNS57160

Description
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad, 300krad or 500krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7469U2A SupIR-SMD, 100 krad TID, QPL IRHNS57160 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57160SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7469U2A SupIR-SMD, 300 krad TID, QPL IRHNS53160 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS53160SCS SupIR-SMD, 300 krad(Si) TID, QIRL JANSG2N7469U2A SupIR-SMD, 500 krad TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160 - IRHNS57160 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad, 300krad or 500krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7469U2A SupIR-SMD, 100 krad TID, QPL IRHNS57160 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57160SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7469U2A SupIR-SMD, 300 krad TID, QPL IRHNS53160 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS53160SCS SupIR-SMD, 300 krad(Si) TID, QIRL JANSG2N7469U2A SupIR-SMD, 500 krad TID, QPL
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Datasheet
Datasheet Summary
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IRHNS57160 is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD ceramic surface-mount package, designed for space applications requiring high reliability. It has a drain-to-source breakdown voltage of 100V, continuous drain current of 75A at 25°C, and a maximum on-state resistance of 12mΩ. The device exhibits a total gate charge of 160nC and is qualified to JANS screening flow per MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hermetically sealed, has an ESD rating of Class 3B per MIL-STD-750, Method 1020, and operates over a junction temperature range of -55°C to +150°C. Single event effects are hardened, and the package weighs 3.3g.

Datasheet Summary
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IRHNS57160 is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD ceramic surface-mount package, designed for space applications requiring high reliability. It has a drain-to-source breakdown voltage of 100V, continuous drain current of 75A at 25°C, and a maximum on-state resistance of 12mΩ. The device exhibits a total gate charge of 160nC and is qualified to JANS screening flow per MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hermetically sealed, has an ESD rating of Class 3B per MIL-STD-750, Method 1020, and operates over a junction temperature range of -55°C to +150°C. Single event effects are hardened, and the package weighs 3.3g.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160 - IRHNS57160 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160
IRHNS57160
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160 IRHNS57160
Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad, 300krad or 500krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7469U2A SupIR-SMD, 100 krad TID, QPL IRHNS57160 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57160SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7469U2A SupIR-SMD, 300 krad TID, QPL IRHNS53160 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS53160SCS SupIR-SMD, 300 krad(Si) TID, QIRL JANSG2N7469U2A SupIR-SMD, 500 krad TID, QPL

Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface Mount
  • ESD rating: class 3B per MIL-STD-750, Method 1020
  • TID levels: 100krad, 300krad or 500krad
  • Screening level: JANS

Potential Applications

  • DC-DC converters
  • Motor drives

Slash sheet


Similar Parts

JANSR2N7469U2A

SupIR-SMD, 100 krad TID, QPL

IRHNS57160

SupIR-SMD, 100 krad(Si) TID, COTS

IRHNS57160SCS

SupIR-SMD, 100 krad(Si) TID, QIRL

JANSF2N7469U2A

SupIR-SMD, 300 krad TID, QPL

IRHNS53160

SupIR-SMD, 300 krad(Si) TID, COTS

IRHNS53160SCS

SupIR-SMD, 300 krad(Si) TID, QIRL

JANSG2N7469U2A

SupIR-SMD, 500 krad TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHNS57160
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57160
Polarity N-Channel; N
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