Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150 IRHN93150

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150 - IRHN93150 - Infineon Technologies AG
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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P-channel radiation-hardened power MOSFET in SMD-1 package designed for space applications with a drain-source breakdown voltage of -100 V, continuous drain current of -22 A, and static drain-to-source on-state resistance of 80 mΩ. Designed for switched applications including DC-DC conversion and motor drives, it is hermetically sealed with a ceramic package and rated for 300 krad(Si) total ionizing dose. Complies with MIL-PRF-19500 JANS screening flow and MIL-STD-750, Method 1020 for ESD tolerance.

Datasheet Summary
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P-channel radiation-hardened power MOSFET in SMD-1 package designed for space applications with a drain-source breakdown voltage of -100 V, continuous drain current of -22 A, and static drain-to-source on-state resistance of 80 mΩ. Designed for switched applications including DC-DC conversion and motor drives, it is hermetically sealed with a ceramic package and rated for 300 krad(Si) total ionizing dose. Complies with MIL-PRF-19500 JANS screening flow and MIL-STD-750, Method 1020 for ESD tolerance.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150 - IRHN93150 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150
IRHN93150
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150 IRHN93150
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 300 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Proton tolerant
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHN9150

SMD-1, 100 krad(Si) TID, COTS

IRHN9150D

SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

JANTXVR2N7422U

SMD-1, 100 krad(Si) TID, QPL

JANSR2N7422U

SMD-1, 100 krad(Si) TID, QPL

IRHN93150

SMD-1, 300 krad(Si) TID, COTS

JANSF2N7422U

SMD-1, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHN93150
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN93150
Polarity P-Channel; P
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