ISC16DP15LM is a P-channel power MOSFET optimized for switching applications requiring -150 V drain-source voltage and logic-level gate drive. It is packaged in PG-TDSON-8, measuring 5.35 mm maximum length and 6.42 mm maximum width. The device has a maximum on-state resistance of 160 mΩ at VGS = -4.5 V and a continuous drain current rating of -22 A at 25°C case temperature. It is 100% avalanche tested with a single-pulse avalanche energy rating of 700 mJ and meets JEDEC industrial qualification requirements. The packaging is lead-free, RoHS compliant, and halogen-free per IEC 61249-2-21.
P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel MOSFETs 150 V in SuperSO8 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC16DP15LM |
| Product Name | Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISC16DP15LM |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1600 ohms |
