P-channel MOSFET in SOT-223 package with a -60 V drain-source voltage, maximum on-state resistance of 125 mΩ, and continuous drain current of -2.8 A at 25°C. The device is avalanche rugged, fully qualified for industrial applications, and RoHS compliant. Thermal resistance junction-to-ambient is 70 °C/W on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area for the drain. The gate-source voltage rating is ±20 V, and the operating temperature range is -55 °C to 150 °C.
P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISP12DP06NM |
| Product Name | Power - MOSFET (Si/SiC) - Small Signal/Small Power MOSFET - ISP12DP06NM |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1250 ohms |
