Infineon Technologies AG Power - MOSFET (Si/SiC) - Small Signal/Small Power MOSFET - ISP12DP06NM ISP12DP06NM

P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel 60V power MOSFETs in SOT-223 package is the new technology targeted for consumer applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The product improve efficiency at low loads due to low Qg.and is available in logic level featuring a wide RDS(on) range. Summary of Features VDS = -60V Wide RDS(on) range Logic level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial