The JANSF2N7390U is a radiation-hardened, P-channel power MOSFET in an 18-pin LCC ceramic package, designed for space applications requiring high reliability. It has a drain-to-source voltage rating of -200 V, a continuous drain current of -4.0 A at 25°C, and a maximum on-resistance of 0.80 Ω at -12 V gate bias. The device is hardened to 300 kRads(Si) total ionizing dose and exhibits single event effect immunity. It features a hermetically sealed construction, surface mount capability, and an ESD rating of Class 1B per MIL-STD-750, Method 1020. The operating junction temperature range is -55°C to +150°C, with a thermal resistance from junction to case of 5.0 °C/W.
Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 300 krad(Si) TID, QPL
Features
Potential Applications
Slash sheet
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSF2N7390U |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - JANSF2N7390U |
| Polarity | P-Channel; P |