ISC044N15NM6 is an N-channel power MOSFET in a PG-TSON-8 package, rated for 150 V drain-source voltage and 156 A continuous drain current. It has a maximum on-resistance of 4.4 mΩ at 10 V gate drive and 50 A drain current, with a gate charge total of up to 72 nC. The device is avalanche-rated for single-pulse energy of 1050 mJ at 15 A drain current and features a maximum junction temperature of 175 °C. It is RoHS compliant, halogen-free per IEC 61249-2-21, and fully qualified for industrial applications according to JEDEC standards. The package measures 5.10 mm × 6.10 mm with a height of 1.10 mm and is designed for 6 cm² copper drain area on an FR4 PCB in still air, with a thermal resistance from junction to case bottom of 0.59 °C/W.
OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package
ISC044N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC044N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC044N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0044 ohms |
