Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANS2N6849 JANS2N6849

JANS2N6849 is a hermetically sealed, P-channel power MOSFET in a TO-205AF/TO-39 package, designed for high-reliability applications including space systems. It has a drain-to-source breakdown voltage of -100V, a continuous drain current of -6.5A at 25°C, and a maximum on-state resistance of 0.30Ω at VGS = -10V. The device supports repetitive avalanche energy up to 2.5 mJ and has a peak diode reverse recovery dv/dt rating of -5.5 V/ns. Thermal resistance from junction to case is 5.0°C/W. The part is qualified to the JANS screening flow per MIL-PRF-19500 and meets ESD classification Class 1C per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C.