Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2 ISC035N10NM5LF2

Description
OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 5x6 package, ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) High max. pulse current High max. continuous current Available in small low profile package Benefits Rugged linear mode operation Low conduction losses High in-rush current enabled Fast start-up and shorter down time Industry standard footprint Potential Applications Telecom - Hot-Swap Control Server - Hot-Swap Control Battery management (BMS) – Battery Protection Complimentary products: BSC035N10NS5 BSC040N10NS5 BSC040N10NS5SC IPB017N10N5LF
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Description
OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 5x6 package, ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) High max. pulse current High max. continuous current Available in small low profile package Benefits Rugged linear mode operation Low conduction losses High in-rush current enabled Fast start-up and shorter down time Industry standard footprint Potential Applications Telecom - Hot-Swap Control Server - Hot-Swap Control Battery management (BMS) – Battery Protection Complimentary products: BSC035N10NS5 BSC040N10NS5 BSC040N10NS5SC IPB017N10N5LF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2 - ISC035N10NM5LF2 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2
ISC035N10NM5LF2
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2 ISC035N10NM5LF2
OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 5x6 package, ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS). Summary of Features Wide safe operating area (SOA) Low RDS(on) High max. pulse current High max. continuous current Available in small low profile package Benefits Rugged linear mode operation Low conduction losses High in-rush current enabled Fast start-up and shorter down time Industry standard footprint Potential Applications Telecom - Hot-Swap Control Server - Hot-Swap Control Battery management (BMS) – Battery Protection Complimentary products: BSC035N10NS5 BSC040N10NS5 BSC040N10NS5SC IPB017N10N5LF

OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package

ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C.

The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 5x6 package, ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS).


Summary of Features

  • Wide safe operating area (SOA)
  • Low RDS(on)
  • High max. pulse current
  • High max. continuous current
  • Available in small low profile package

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • High in-rush current enabled
  • Fast start-up and shorter down time
  • Industry standard footprint

Potential Applications

  • Telecom - Hot-Swap Control
  • Server - Hot-Swap Control
  • Battery management (BMS) – Battery Protection

Complimentary products:

  • BSC035N10NS5
  • BSC040N10NS5
  • BSC040N10NS5SC
  • IPB017N10N5LF
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISC035N10NM5LF2
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0035 ohms
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