ISC035N10NM5LF2 is a 100 V N-channel MOSFET designed for hot swap, battery protection, and e-fuse applications. It is packaged in a PG-TDSON-8 case measuring 5.35 mm maximum length and 6.10 mm maximum width, with a height of 1.20 mm. The part has a maximum drain-source on-state resistance of 3.5 mΩ at 10 V gate bias and 50 A drain current, and supports a continuous drain current of 116 A at 100 °C case temperature. It is rated for a single-pulse avalanche energy of 398 mJ and has a junction-to-case thermal resistance of 0.7 °C/W bottom and 20 °C/W top. The device is RoHS compliant, halogen-free according to IEC61249-2-21, and qualified according to JEDEC tests.
OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package
ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C.
The OptiMOS™ Linear FET is a revolutionary approach that solves the trade-off between on-state resistance and linear mode capability. Combined with the low cost, low profile PQFN 5x6 package, ISC035N10NM5LF2 is targeted for high in-rush current, harsh applications, such as hot-swap, e-fuse, and protection applications commonly found in telecom, data server and battery management systems (BMS).
Summary of Features
Benefits
Potential Applications
Complimentary products:
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC035N10NM5LF2 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC035N10NM5LF2 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0035 ohms |
