Infineon Technologies AG N-Channel Power MOSFET ISC080N10NM6

OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Infineon’s latest OptiMOS™ 6 MOSFET technology at 100 V utilizes a proprietary trench technology that enables higher power density, efficiency and ruggedness. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits. Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones. In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. Summary of Features Compared to OptiMOS™ 5, the new technology achieves: ~20% lower RDS(on) 30% improved FOMg and 40% better FOMgd Lower and softer reverse recovery charge (Qrr) Ideal for high switching frequency MSL 1 classified according to J-STD-020 175 °C junction temperature rating High avalanche energy rating Pb-free lead plating RoHS compliant Benefits Low conduction losses Low switching losses Fast turn on and off Less paralleling required Robust reliable performance Environmentally friendly Less paralleling required Potential Applications Telecom Server Drones Robotics Solar Power tools Battery management system Applications Light electric vehicles (LEV) Solutions for inductive wireless charging above 50 W State-of-the-art semiconductors enabling the new digitalized, ultra-connected healthcare ecosystem Designers who used this product also designed with IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET 2EDF7275K | Gate driver ICs 1EDN7512G | Gate driver ICs CY8C6244LQQ-S4D92 | PSOC™ 62x4 IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET 2EDF7275K | Gate driver ICs 1EDN7512G | Gate driver ICs CY8C6244LQQ-S4D92 | PSOC™ 62x4 IPL60R065P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET 1 2