Infineon Technologies AG N-Channel Power MOSFET ISC015N04NM5

Description
OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on. Summary of Features Normal level gate threshold (2.8V typical) 175°C junction temperature (Tj) Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity Low gate charge Superior thermal resistance Strong SOA (safe operating area) rating Benefits Reduced switching losses leading to greater system efficiency and power density Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios Potential Applications Battery powered applications Battery powered tools Battery management Low-voltage drives Applications Cordless power tools and outdoor power equipment Electric power steering (EPS) Designers who used this product also designed with BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET
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Description
OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on. Summary of Features Normal level gate threshold (2.8V typical) 175°C junction temperature (Tj) Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity Low gate charge Superior thermal resistance Strong SOA (safe operating area) rating Benefits Reduced switching losses leading to greater system efficiency and power density Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios Potential Applications Battery powered applications Battery powered tools Battery management Low-voltage drives Applications Cordless power tools and outdoor power equipment Electric power steering (EPS) Designers who used this product also designed with BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET
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Suppliers

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N-Channel Power MOSFET - ISC015N04NM5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
ISC015N04NM5
N-Channel Power MOSFET ISC015N04NM5
OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on. Summary of Features Normal level gate threshold (2.8V typical) 175°C junction temperature (Tj) Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity Low gate charge Superior thermal resistance Strong SOA (safe operating area) rating Benefits Reduced switching losses leading to greater system efficiency and power density Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios Potential Applications Battery powered applications Battery powered tools Battery management Low-voltage drives Applications Cordless power tools and outdoor power equipment Electric power steering (EPS) Designers who used this product also designed with BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET BSS84PW | Small signal/small power MOSFET BSS138W | Small signal/small power MOSFET

OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package

With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability.

The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.


Summary of Features

  • Normal level gate threshold (2.8V typical)
  • 175°C junction temperature (Tj)
  • Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity
  • Low gate charge
  • Superior thermal resistance
  • Strong SOA (safe operating area) rating

Benefits

  • Reduced switching losses leading to greater system efficiency and power density
  • Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method
  • Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios

Potential Applications

  • Battery powered applications
  • Battery powered tools
  • Battery management
  • Low-voltage drives

Applications

  • Cordless power tools and outdoor power equipment
  • Electric power steering (EPS)

Designers who used this product also designed with


  • BSS84PW |
    Small signal/small power MOSFET
  • BSS138W |
    Small signal/small power MOSFET
  • BSS84PW |
    Small signal/small power MOSFET
  • BSS138W |
    Small signal/small power MOSFET
  • BSS84PW |
    Small signal/small power MOSFET
  • BSS138W |
    Small signal/small power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISC015N04NM5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0015 ohms
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