OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability.
The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Summary of Features
Normal level gate threshold (2.8V typical)
175°C junction temperature (Tj)
Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity
Low gate charge
Superior thermal resistance
Strong SOA (safe operating area) rating
Benefits
Reduced switching losses leading to greater system efficiency and power density
Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method
Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios
Potential Applications
Battery powered applications
Battery powered tools
Battery management
Low-voltage drives
Applications
Cordless power tools and outdoor power equipment
Electric power steering (EPS)
Designers who used this product also designed with
BSS84PW | Small signal/small power MOSFET
BSS138W | Small signal/small power MOSFET
BSS84PW | Small signal/small power MOSFET
BSS138W | Small signal/small power MOSFET
BSS84PW | Small signal/small power MOSFET
BSS138W | Small signal/small power MOSFET
OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal level (higher threshold voltage) drive capability.
The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.
Summary of Features
- Normal level gate threshold (2.8V typical)
- 175°C junction temperature (Tj)
- Optimized charge ratio (QGD/QGS <0.8) for dv/dt immunity
- Low gate charge
- Superior thermal resistance
- Strong SOA (safe operating area) rating
Benefits
- Reduced switching losses leading to greater system efficiency and power density
- Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method
- Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios
Potential Applications
- Battery powered applications
- Battery powered tools
- Battery management
- Low-voltage drives
Applications
- Cordless power tools and outdoor power equipment
- Electric power steering (EPS)
Designers who used this product also designed with
- BSS84PW |
Small signal/small power MOSFET
- BSS138W |
Small signal/small power MOSFET
- BSS84PW |
Small signal/small power MOSFET
- BSS138W |
Small signal/small power MOSFET
- BSS84PW |
Small signal/small power MOSFET
- BSS138W |
Small signal/small power MOSFET