Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC073N12LM6 ISC073N12LM6

Description
OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and Gardening Tools Adapters and Fast Chargers Solar Telecom Light electric vehicles
Request a Quote Datasheet
Description
OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and Gardening Tools Adapters and Fast Chargers Solar Telecom Light electric vehicles
Request a Quote Datasheet

Suppliers

Company
Product
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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC073N12LM6 - ISC073N12LM6 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC073N12LM6
ISC073N12LM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC073N12LM6 ISC073N12LM6
OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family. Summary of Features Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on) up to 66% better FOMg up to 90% better Qrr up to 35% better FOMoss Benefits Very low on-resistance Very low reverse recovery charge Excellent gate charge x RDS(on) High avalanche energy rating 175°C junction temperature rating Pb-free plating RoHS compliant Halogen-free MSL1 classified Potential Applications Power and Gardening Tools Adapters and Fast Chargers Solar Telecom Light electric vehicles

OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package

This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.


Summary of Features

Compared to OptiMOS™ 3, the technology features:

  • up to 58% better RDS(on)
  • up to 66% better FOMg
  • up to 90% better Qrr
  • up to 35% better FOMoss

Benefits

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

Potential Applications

  • Power and Gardening Tools
  • Adapters and Fast Chargers
  • Solar
  • Telecom
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number ISC073N12LM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC073N12LM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0073 ohms
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