Infineon Technologies AG Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISP16DP10LMA ISP16DP10LMA

P-channel power MOSFETs 100 V in SOT-223 package for automotive applications ISP16DP10LMA features a low RDS(on) of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the reduction of design complexity. In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications. Summary of Features Automotive qualification Lowest RDS(on) in portfolio Supports a wide variety of applications Robust, reliable performance Benefits Quality and reliability Low conduction lossses Long production lifetime and support Extention of battery lifetime Applications Automotive