P-channel MOSFET in PG-SOT223-4 package, rated for -100 V drain-source voltage and -3.9 A continuous drain current, with a maximum on-resistance of 167 mΩ at -4.5 V gate-source voltage. The device is qualified to AEC-Q101 and complies with RoHS and halogen-free IEC 61249-2-21 standards. It features a gate charge total of up to 55 nC and an avalanche energy rating of 1466 mJ for single-pulse conditions.
P-channel power MOSFETs 100 V in SOT-223 package for automotive applications
ISP16DP10LMA features a low RDS(on) of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the reduction of design complexity.
In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISP16DP10LMA |
| Product Name | Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - ISP16DP10LMA |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1670 ohms |
