Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE IRHNS57163SE

Description
Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7472U2A SupIR-SMD, 100 krad TID, QPL IRHNS57163SE SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57163SESCS SupIR-SMD, 100 krad(Si) TID, QIRL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE - IRHNS57163SE - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7472U2A SupIR-SMD, 100 krad TID, QPL IRHNS57163SE SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57163SESCS SupIR-SMD, 100 krad(Si) TID, QIRL
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Datasheet
Datasheet Summary
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IRHNS57163SE is a radiation-hardened, N-channel power MOSFET designed for space applications, featuring a SupIR-SMD surface-mount ceramic package weighing 3.3 g. It has a drain-to-source breakdown voltage of 130 V, continuous drain current of 75 A, and a maximum on-state resistance of 13.5 mΩ. The device supports a total ionizing dose of 100 krad(Si), is hardened against single event effects up to 84 MeV·cm²/mg, and meets MIL-PRF-19500 screening standards. It is qualified under JANS screening, has a gate charge of 160 nC, an ESD rating of Class 3B per MIL-STD-750 Method 1020, and operates from -55°C to +150°C junction temperature.

Datasheet Summary
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IRHNS57163SE is a radiation-hardened, N-channel power MOSFET designed for space applications, featuring a SupIR-SMD surface-mount ceramic package weighing 3.3 g. It has a drain-to-source breakdown voltage of 130 V, continuous drain current of 75 A, and a maximum on-state resistance of 13.5 mΩ. The device supports a total ionizing dose of 100 krad(Si), is hardened against single event effects up to 84 MeV·cm²/mg, and meets MIL-PRF-19500 screening standards. It is qualified under JANS screening, has a gate charge of 160 nC, an ESD rating of Class 3B per MIL-STD-750 Method 1020, and operates from -55°C to +150°C junction temperature.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE - IRHNS57163SE - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE
IRHNS57163SE
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE IRHNS57163SE
Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Ultra Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad Screening level: JANS Potential Applications DC-DC converters Motor drives Slash sheet Similar Parts JANSR2N7472U2A SupIR-SMD, 100 krad TID, QPL IRHNS57163SE SupIR-SMD, 100 krad(Si) TID, COTS IRHNS57163SESCS SupIR-SMD, 100 krad(Si) TID, QIRL

Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Ultra Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface Mount
  • ESD rating: class 3B per MIL-STD-750, Method 1020
  • TID levels: 100krad
  • Screening level: JANS

Potential Applications

  • DC-DC converters
  • Motor drives

Slash sheet


Similar Parts

JANSR2N7472U2A

SupIR-SMD, 100 krad TID, QPL

IRHNS57163SE

SupIR-SMD, 100 krad(Si) TID, COTS

IRHNS57163SESCS

SupIR-SMD, 100 krad(Si) TID, QIRL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHNS57163SE
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS57163SE
Polarity N-Channel; N
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