IRHMS67260SCV is a radiation-hardened, N-channel power MOSFET in a low ohmic TO-254AA thru-hole package with a 200V drain-to-source breakdown voltage, 45A continuous drain current, and a maximum on-state resistance of 29mΩ. It features a total gate charge of 240nC, is hermetically sealed with ceramic eyelets, and is qualified to 100 krad(Si) total ionizing dose. The device meets MIL-PRF-19500 screening requirements for space applications and is hardened against single event effects up to 90 MeV⋅cm²/mg. It complies with ESD Class 3A per MIL-STD-750, Method 1020.
Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHMS67260SCV |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHMS67260SCV |
| Polarity | N-Channel; N |