JANSF2N7652U2A is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD ceramic surface-mount package, designed for space applications requiring high reliability. It features a 60V drain-to-source breakdown voltage, 100A continuous drain current, and a maximum on-state resistance of 4.0mΩ at 12V gate drive. The device has a total gate charge of 194nC and is qualified per MIL-PRF-19500, with a total ionizing dose (TID) rating of 300krad(Si). It is hermetically sealed, satisfies ESD class 3B per MIL-STD-750 Method 1020, and operates from -55°C to +150°C. The part is hardened against single event effects up to 90 MeV·cm²/mg.
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 300 krad TID, QPL
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Potential Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANSF2N7652U2A |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7652U2A |
| Polarity | N-Channel; N |