Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D IRHN9150D

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D - IRHN9150D - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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The IRHN9150D is a radiation-hardened P-channel power MOSFET in an SMD-1 package, rated for -100 V drain-to-source breakdown voltage and -22 A continuous drain current. It features a maximum on-resistance of 80 mΩ at -12 V gate drive and -14 A current, a total gate charge of 200 nC, and is hermetically sealed in a ceramic housing with a typical weight of 2.6 g. The device is qualified to MIL-PRF-19500 for space applications and tested to a total ionizing dose of 100 krad(Si) with single event effect hardening. It meets ESD Class 2 requirements per MIL-STD-750, Method 1020. Thermal resistance from junction to case is 0.83 °C/W. The part is suitable for DC-DC converters and motor drives.

Datasheet Summary
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The IRHN9150D is a radiation-hardened P-channel power MOSFET in an SMD-1 package, rated for -100 V drain-to-source breakdown voltage and -22 A continuous drain current. It features a maximum on-resistance of 80 mΩ at -12 V gate drive and -14 A current, a total gate charge of 200 nC, and is hermetically sealed in a ceramic housing with a typical weight of 2.6 g. The device is qualified to MIL-PRF-19500 for space applications and tested to a total ionizing dose of 100 krad(Si) with single event effect hardening. It meets ESD Class 2 requirements per MIL-STD-750, Method 1020. Thermal resistance from junction to case is 0.83 °C/W. The part is suitable for DC-DC converters and motor drives.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D - IRHN9150D - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D
IRHN9150D
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D IRHN9150D
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS, On DBC carrier Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Proton tolerant Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications Isolated DC-DC converters Motor drives Electric propulsion Thermal management Slash sheet Similar Parts IRHN9150 SMD-1, 100 krad(Si) TID, COTS IRHN9150D SMD-1, 100 krad(Si) TID, COTS, On DBC carrier JANTXVR2N7422U SMD-1, 100 krad(Si) TID, QPL JANSR2N7422U SMD-1, 100 krad(Si) TID, QPL IRHN93150 SMD-1, 300 krad(Si) TID, COTS JANSF2N7422U SMD-1, 300 krad(Si) TID, QPL

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Proton tolerant
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • Isolated DC-DC converters
  • Motor drives
  • Electric propulsion
  • Thermal management

Slash sheet


Similar Parts

IRHN9150

SMD-1, 100 krad(Si) TID, COTS

IRHN9150D

SMD-1, 100 krad(Si) TID, COTS, On DBC carrier

JANTXVR2N7422U

SMD-1, 100 krad(Si) TID, QPL

JANSR2N7422U

SMD-1, 100 krad(Si) TID, QPL

IRHN93150

SMD-1, 300 krad(Si) TID, COTS

JANSF2N7422U

SMD-1, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHN9150D
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHN9150D
Polarity P-Channel; P
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