New logic level MOSFETs for low VGS
Available in three different voltage classes (60 V, 80 V and 100 V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. VGS
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N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
N-Channel 60V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
Win Source Part Number: 960970-IRL60HS118
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Power Dissipation (Max): 11.5W (Tc)
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-PQFN (2x2)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): CSD18543Q3A;
Fake Threat In the Open Market: 57 pct.
HTSUS: 0000.00.0000
Mfr: International Rectifier
Other Names: 2156-IRL60HS118,INFI
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 18.5A 6PQFN Product overview: IRL60HS118 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL60HS118 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 18.5A 6PQFN
MOSFET, N-CH, 60V, 18.5A, 11.5W, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0133ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
| Infineon Technologies AG | RS Components, Ltd. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRL60HS118 | 2439303P | IRL60HS118DKR-ND | 960970-IRL60HS118 | 278-IRL60HS118 | IRL60HS118 | 93AC7148 | IRL60HS118 |
| Product Name | N-Channel Power MOSFET | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 18.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 18.5A, 11.5W, Pqfn; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | Si/SiC | |||||||
| rDS(on) | 0.0170 ohms | 0.0133 ohms | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | PG-TSDSON-6 | PQFN | 6-PowerVDFN | SOT3 | Tape & Reel (TR) | 6-PowerVDFN | TO-3 |