The ISZ0702NLS is an N-channel power MOSFET designed for high-frequency switching in charger applications. It is packaged in a PG-TSDSON-8 FL package measuring 3.20 to 3.40 mm in length and width, with a height of 0.90 to 1.10 mm. The device has a drain-source voltage rating of 60 V, a maximum continuous drain current of 86 A, and a drain-source on-state resistance of 4.5 mΩ. It is 100% avalanche tested and qualified for standard grade applications, with a junction temperature range from -55 °C to 175 °C. The part is halogen-free per IEC 61249-2-21 and RoHS compliant.
OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISZ0702NLS |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0045 ohms |
