Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANS2N6851 JANS2N6851

JANS2N6851 is a hermetically sealed, P-channel HEXFET® power MOSFET designed for high-reliability applications, rated at -200V drain-to-source voltage and -4.0A continuous drain current at 25°C. It is packaged in a TO-205AF (TO-39) case, weighing 0.98 g, and operates with a junction temperature range of -55°C to +150°C. The device features repetitive avalanche capability with 2.5 mJ per pulse, a peak diode recovery dv/dt of -5.0 V/ns, and a static drain-to-source on-resistance of up to 0.80 Ω at -10V gate drive. It meets MIL-PRF-19500/564 and is ESD rated Class 1C per MIL-STD-750, Method 1020.