ISC045N03L5S is an N-channel MOSFET optimized for high-performance buck converters and clean switching, housed in a PG-TDSON-8 package. It has a maximum drain-source voltage of 30 V, a maximum continuous drain current of 63 A, and a maximum on-resistance of 4.5 mΩ at 25 °C. The device features a low gate charge of 13 nC (0 V to 10 V) and a low thermal resistance of 4.2 K/W from junction to case. It is RoHS compliant and halogen-free according to IEC61249-2-21, and qualified to JEDEC standards.
Low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio
With the combined portfolio of Infineon's OptiMOS™ and StrongIRFET power MOSFET families, Infineon offers the right choice for all different customers and their requirements.
Especially for customers who are looking for a simple and price competitive solution, but still want to enjoy a stable supply at the well-established Infineon quality, we offer the right products.
The products can address a broad range of applications such as SMPS (adapter and charger), battery powered applications, motor control and drives, battery management systems, inverters, computing and mobile applications.
The actual portfolio focus on 30V n-channel MOSFETs and products for smaller power handling (n- & p-channel) in a wide range of packages.
Summary of Features
Benefits
Potential Applications
General purpose for industrial and consumer applications.
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC045N03L5S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC045N03L5S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0045 ohms |
