Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064 IRHNS9A7064

Description
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad or 300krad Screening level: JANS Potential Applications DC-DC converters Electric propulsion Motor drives Slash sheet Similar Parts JANSR2N7652U2A SupIR-SMD, 100 krad TID, QPL IRHNS9A7064 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS9A7064SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7652U2A SupIR-SMD, 300 krad TID, QPL IRHNS9A3064 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS9A3064SCS SupIR-SMD, 300 krad(Si) TID, QIRL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064 - IRHNS9A7064 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad or 300krad Screening level: JANS Potential Applications DC-DC converters Electric propulsion Motor drives Slash sheet Similar Parts JANSR2N7652U2A SupIR-SMD, 100 krad TID, QPL IRHNS9A7064 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS9A7064SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7652U2A SupIR-SMD, 300 krad TID, QPL IRHNS9A3064 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS9A3064SCS SupIR-SMD, 300 krad(Si) TID, QIRL
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Datasheet
Datasheet Summary
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IRHNS9A7064 is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD surface-mount ceramic package, designed for space applications with a 60V drain-to-source breakdown voltage and 100A continuous drain current. It features a maximum on-state resistance of 4.0mΩ at 12V gate voltage and 100A drain current, a total gate charge of 194nC, and is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 100krad(Si). The device is hermetically sealed, weighs 3.3g, and meets ESD class 3B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 0.50°C/W. It is hardened against single event effects up to 90 MeV·cm²/mg.

Datasheet Summary
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IRHNS9A7064 is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD surface-mount ceramic package, designed for space applications with a 60V drain-to-source breakdown voltage and 100A continuous drain current. It features a maximum on-state resistance of 4.0mΩ at 12V gate voltage and 100A drain current, a total gate charge of 194nC, and is qualified to MIL-PRF-19500 with a total ionizing dose tolerance of 100krad(Si). The device is hermetically sealed, weighs 3.3g, and meets ESD class 3B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 0.50°C/W. It is hardened against single event effects up to 90 MeV·cm²/mg.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064 - IRHNS9A7064 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064
IRHNS9A7064
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064 IRHNS9A7064
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Fast switching Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface Mount ESD rating: class 3B per MIL-STD-750, Method 1020 TID levels: 100krad or 300krad Screening level: JANS Potential Applications DC-DC converters Electric propulsion Motor drives Slash sheet Similar Parts JANSR2N7652U2A SupIR-SMD, 100 krad TID, QPL IRHNS9A7064 SupIR-SMD, 100 krad(Si) TID, COTS IRHNS9A7064SCS SupIR-SMD, 100 krad(Si) TID, QIRL JANSF2N7652U2A SupIR-SMD, 300 krad TID, QPL IRHNS9A3064 SupIR-SMD, 300 krad(Si) TID, COTS IRHNS9A3064SCS SupIR-SMD, 300 krad(Si) TID, QIRL

Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface Mount
  • ESD rating: class 3B per MIL-STD-750, Method 1020
  • TID levels: 100krad or 300krad
  • Screening level: JANS

Potential Applications

  • DC-DC converters
  • Electric propulsion
  • Motor drives

Slash sheet


Similar Parts

JANSR2N7652U2A

SupIR-SMD, 100 krad TID, QPL

IRHNS9A7064

SupIR-SMD, 100 krad(Si) TID, COTS

IRHNS9A7064SCS

SupIR-SMD, 100 krad(Si) TID, QIRL

JANSF2N7652U2A

SupIR-SMD, 300 krad TID, QPL

IRHNS9A3064

SupIR-SMD, 300 krad(Si) TID, COTS

IRHNS9A3064SCS

SupIR-SMD, 300 krad(Si) TID, QIRL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHNS9A7064
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHNS9A7064
Polarity N-Channel; N
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