JANTXV2N6770 is a hermetically sealed, N-channel HEXFET® MOSFET rated for 500V drain-to-source voltage and 12A continuous drain current at 25°C, packaged in a TO-204AA (TO-3) case. It features repetitive avalanche energy rating of 15 mJ, peak diode recovery dv/dt of 3.5 V/ns, and a maximum power dissipation of 150 W. The device has a typical junction-to-case thermal resistance of 0.83 °C/W and operates over a junction temperature range of -55°C to 150°C. It meets MIL-STD-750, Method 1020 for ESD classification Class 3A and is manufactured to MIL-PRF-19500 standards.
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A JANTXV2N6770 with Hermetic Packaging
Benefits
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | JANTXV2N6770 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - JANTXV2N6770 |
| Polarity | N-Channel; N |
