The ISZ330N12LM6 is an N-channel logic-level MOSFET designed for high-frequency switching and synchronous rectification, with a 120 V drain-source voltage rating and a maximum on-resistance of 33 mΩ. It is packaged in a PG-TSDSON-8 case measuring 3.2 to 3.4 mm in length and width, with a height of 0.90 to 1.10 mm. The device supports a continuous drain current of 24 A and an avalanche current of 9 A, with a maximum junction temperature of 175 °C. It has a gate charge of 4.1 nC for a 4.5 V gate drive and a reverse recovery charge of 45 nC under a 1000 A/µs current rate. The part is RoHS compliant, halogen-free per IEC 61249-2-21, and classified as MSL 1 per J-STD-020. It is fully qualified for industrial applications according to JEDEC standards.
OptiMOS™ 6 power MOSFET logic level 120 V in PQFN 3.3 x 3.3 package
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 33 mOhm on-resistance. ISZ330N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
Summary of Features
Compared to OptiMOS™ 3, the technology features:
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISZ330N12LM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISZ330N12LM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0330 ohms |
