ISC037N13NM6 is an N-channel MOSFET in PG-TSON-8 package for motor drives and battery-powered applications, rated for 135 V drain-source voltage, 172 A continuous drain current, and 175 °C junction temperature. It features a maximum on-resistance of 3.7 mΩ and an avalanche energy rating of 935 mJ. The device is 100% avalanche tested, RoHS compliant, halogen-free per IEC 61249-2-21, and meets JEDEC industrial qualification standards. Package dimensions are 5.10 mm × 6.10 mm with 1.27 mm pitch. Reverse recovery charge is specified up to 218 nC at 500 A/µs di/dt, and gate charge totals up to 107 nC.
OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package
The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS.
Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses.
The 38% reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.
Summary of Features
Compared to OptiMOS™ 5 150 V
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | ISC037N13NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - ISC037N13NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0037 ohms |
