Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSR2N7474U2A JANSR2N7474U2A

JANSR2N7474U2A is a radiation-hardened, N-channel power MOSFET in a SupIR-SMD ceramic surface-mount package, rated for 250V breakdown voltage and 45A continuous drain current at 25°C. It has a maximum on-resistance of 60 mΩ and a maximum total gate charge of 165 nC. The device is hermetically sealed, weighs 3.3 g, and is qualified to JANS screening per MIL-PRF-19500 with a total ionizing dose tolerance of 100 krad(Si). It is hardened against single event effects up to 84 MeV·cm²/mg and meets ESD Class 3A per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C.