Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30 IRHNJ593Z30

Description
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface mount ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ597Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ597Z30SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7519U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ593Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7519U3 SMD-0.5, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30 - IRHNJ593Z30 - Infineon Technologies AG
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Description
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface mount ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ597Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ597Z30SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7519U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ593Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7519U3 SMD-0.5, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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IRHNJ593Z30 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a surface-mount SMD-0.5 ceramic package weighing 1.0 g. It features a maximum drain current of -22 A at 25°C, a static drain-to-source on-resistance of 0.070 Ω at -12 V gate bias, and a drain-to-source breakdown voltage of -30 V. The device is hardened to 300 kRads(Si) total ionizing dose and retains performance up to a linear energy transfer of 80 MeV·cm²/mg. It is hermetically sealed, has a gate threshold voltage range of -2.0 V to -5.0 V post-irradiation, and meets ESD class 1C per MIL-STD-750, Method 1020. Junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 1.67 °C/W.

Datasheet Summary
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IRHNJ593Z30 is a radiation-hardened, P-channel power MOSFET for space applications, housed in a surface-mount SMD-0.5 ceramic package weighing 1.0 g. It features a maximum drain current of -22 A at 25°C, a static drain-to-source on-resistance of 0.070 Ω at -12 V gate bias, and a drain-to-source breakdown voltage of -30 V. The device is hardened to 300 kRads(Si) total ionizing dose and retains performance up to a linear energy transfer of 80 MeV·cm²/mg. It is hermetically sealed, has a gate threshold voltage range of -2.0 V to -5.0 V post-irradiation, and meets ESD class 1C per MIL-STD-750, Method 1020. Junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 1.67 °C/W.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30 - IRHNJ593Z30 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30
IRHNJ593Z30
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30 IRHNJ593Z30
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened. Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface mount ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ597Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ597Z30SCS SMD-0.5, 100 krad(Si) TID, QIRL JANSR2N7519U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ593Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7519U3 SMD-0.5, 300 krad(Si) TID, QPL

Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened.
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface mount
  • ESD rating: class 1C per MIL-STD-750, Method 1020

Potential Applications

  • Synchronous rectification
  • Point of load converter
  • Active ORing circuits

Slash sheet


Similar Parts

IRHNJ597Z30

SMD-0.5, 100 krad(Si) TID, COTS

IRHNJ597Z30SCS

SMD-0.5, 100 krad(Si) TID, QIRL

JANSR2N7519U3

SMD-0.5, 100 krad(Si) TID, QPL

IRHNJ593Z30

SMD-0.5, 300 krad(Si) TID, COTS

JANSF2N7519U3

SMD-0.5, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHNJ593Z30
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHNJ593Z30
Polarity P-Channel; P
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