Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3 JANSF2N7479U3

Description
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ57Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ57Z30A SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached IRHNJ57Z30B SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed JANSR2N7479U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ53Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7479U3 SMD-0.5, 300 krad(Si) TID, QPL JANSG2N7479U3 SMD-0.5, 500 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3 - JANSF2N7479U3 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ57Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ57Z30A SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached IRHNJ57Z30B SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed JANSR2N7479U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ53Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7479U3 SMD-0.5, 300 krad(Si) TID, QPL JANSG2N7479U3 SMD-0.5, 500 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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Radiation-hardened N-channel MOSFET for space applications, housed in a hermetic ceramic SMD-0.5 package, rated for 30V drain-to-source voltage and 22A continuous drain current with a maximum on-state resistance of 20mΩ at 25°C and 24mΩ after total ionizing dose irradiation up to 300krad(Si). Total gate charge is 65nC, and the device meets JANS screening flow per MIL-PRF-19500. It is qualified for single event effect hardness and has an ESD rating of Class 1C per MIL-STD-750, Method 1020.

Datasheet Summary
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Radiation-hardened N-channel MOSFET for space applications, housed in a hermetic ceramic SMD-0.5 package, rated for 30V drain-to-source voltage and 22A continuous drain current with a maximum on-state resistance of 20mΩ at 25°C and 24mΩ after total ionizing dose irradiation up to 300krad(Si). Total gate charge is 65nC, and the device meets JANS screening flow per MIL-PRF-19500. It is qualified for single event effect hardness and has an ESD rating of Class 1C per MIL-STD-750, Method 1020.

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High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3 - JANSF2N7479U3 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3
JANSF2N7479U3
High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3 JANSF2N7479U3
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL Features Single event effect (SEE) hardened. Ultra low RDS(on). Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Surface mount Light weight ESD rating: class 1C per MIL-STD-750, Method 1020 Potential Applications Synchronous rectification Point of load converter Active ORing circuits Slash sheet Similar Parts IRHNJ57Z30 SMD-0.5, 100 krad(Si) TID, COTS IRHNJ57Z30A SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached IRHNJ57Z30B SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed JANSR2N7479U3 SMD-0.5, 100 krad(Si) TID, QPL IRHNJ53Z30 SMD-0.5, 300 krad(Si) TID, COTS JANSF2N7479U3 SMD-0.5, 300 krad(Si) TID, QPL JANSG2N7479U3 SMD-0.5, 500 krad(Si) TID, QPL

Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened.
  • Ultra low RDS(on).
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Surface mount
  • Light weight
  • ESD rating: class 1C per MIL-STD-750, Method 1020

Potential Applications

  • Synchronous rectification
  • Point of load converter
  • Active ORing circuits

Slash sheet


Similar Parts

IRHNJ57Z30

SMD-0.5, 100 krad(Si) TID, COTS

IRHNJ57Z30A

SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached

IRHNJ57Z30B

SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

JANSR2N7479U3

SMD-0.5, 100 krad(Si) TID, QPL

IRHNJ53Z30

SMD-0.5, 300 krad(Si) TID, COTS

JANSF2N7479U3

SMD-0.5, 300 krad(Si) TID, QPL

JANSG2N7479U3

SMD-0.5, 500 krad(Si) TID, QPL

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number JANSF2N7479U3
Product Name High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - JANSF2N7479U3
Polarity N-Channel; N
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