Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHQ57110 IRHQ57110

The IRHQ57110 is a radiation-hardened, quad N-channel power MOSFET in a 28-pin LCC surface-mount package, designed for space-grade DC-DC converters and motor drives. It has a drain-to-source breakdown voltage of 100V, a continuous drain current of 4.6A at 25°C, and a maximum on-state resistance of 0.27Ω at 12V gate bias after exposure to 100 krad(Si) total ionizing dose. The device features a total gate charge of 13nC, a junction-to-case thermal resistance of 11.8°C/W, and is hermetically sealed. It meets MIL-PRF-19500 qualification for space applications and has an ESD rating of Class 1A per MIL-STD-750, Method 1020.