Infineon Technologies AG N-Channel Power MOSFET IRL100HS121

Description
New logic level MOSFETs for low VGS Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. Summary of Features Lowest FOM (R DS(on) x Q g/gd) Optimized Q g, C oss, and Q rr for fast switching Logic level compatibility Tiny PQFN 2x2mm package Benefits Smallest package footprint Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Telecom Adapter Applications Automotive body control module (BCM) Connected and smart lighting for IoT Mobile devices and smartphones Smart conference systems Smart Thermostat Designers who used this product also designed with BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) 1 2
Request a Quote Datasheet
Description
New logic level MOSFETs for low VGS Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. Summary of Features Lowest FOM (R DS(on) x Q g/gd) Optimized Q g, C oss, and Q rr for fast switching Logic level compatibility Tiny PQFN 2x2mm package Benefits Smallest package footprint Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Telecom Adapter Applications Automotive body control module (BCM) Connected and smart lighting for IoT Mobile devices and smartphones Smart conference systems Smart Thermostat Designers who used this product also designed with BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRL100HS121 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRL100HS121
N-Channel Power MOSFET IRL100HS121
New logic level MOSFETs for low VGS Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. Summary of Features Lowest FOM (R DS(on) x Q g/gd) Optimized Q g, C oss, and Q rr for fast switching Logic level compatibility Tiny PQFN 2x2mm package Benefits Smallest package footprint Higher power density designs Higher switching frequency Reduced parts count wherever 5V supplies are available Driven directly from microcontrollers (slow switching) System cost reduction Potential Applications Wireless charging Telecom Adapter Applications Automotive body control module (BCM) Connected and smart lighting for IoT Mobile devices and smartphones Smart conference systems Smart Thermostat Designers who used this product also designed with BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) IAUZ30N10S5L240 | Automotive MOSFET 2EDL8033G4B | Gate driver ICs TLE42744D V50 | OPTIREG™ linear voltage regulators (LDO) SAK-TC377TP-96F300S AA | AURIX™ Family – TC37xTP BSZ15DC02KD H | Dual MOSFET TLE4253E | OPTIREG™ linear voltage regulators (LDO) 1 2

New logic level MOSFETs for low VGS

Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.


Summary of Features

  • Lowest FOM (R DS(on) x Q g/gd)
  • Optimized Q g, C oss, and Q rr for fast switching
  • Logic level compatibility
  • Tiny PQFN 2x2mm package

Benefits

  • Smallest package footprint
  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5V supplies are available
  • Driven directly from microcontrollers (slow switching)
  • System cost reduction

Potential Applications

  • Wireless charging
  • Telecom
  • Adapter

Applications

  • Automotive body control module (BCM)
  • Connected and smart lighting for IoT
  • Mobile devices and smartphones
  • Smart conference systems
  • Smart Thermostat

Designers who used this product also designed with


  • BSZ15DC02KD H |
    Dual MOSFET
  • TLE4253E |
    OPTIREG™ linear voltage regulators (LDO)
  • IAUZ30N10S5L240 |
    Automotive MOSFET
  • 2EDL8033G4B |
    Gate driver ICs
  • TLE42744D V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • SAK-TC377TP-96F300S AA |
    AURIX™ Family – TC37xTP
  • BSZ15DC02KD H |
    Dual MOSFET
  • TLE4253E |
    OPTIREG™ linear voltage regulators (LDO)
  • IAUZ30N10S5L240 |
    Automotive MOSFET
  • 2EDL8033G4B |
    Gate driver ICs
  • TLE42744D V50 |
    OPTIREG™ linear voltage regulators (LDO)
  • SAK-TC377TP-96F300S AA |
    AURIX™ Family – TC37xTP
  • BSZ15DC02KD H |
    Dual MOSFET
  • TLE4253E |
    OPTIREG™ linear voltage regulators (LDO)

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Supplier's Site Datasheet
Single FETs, MOSFETs - IRL100HS121CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL100HS121CT-ND
Single FETs, MOSFETs IRL100HS121CT-ND
N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - IRL100HS121TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL100HS121TR-ND
Single FETs, MOSFETs IRL100HS121TR-ND
N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - IRL100HS121DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL100HS121DKR-ND
Single FETs, MOSFETs IRL100HS121DKR-ND
N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN Dual (2x2)

Buy Now Datasheet
MOSFETs - 2439300 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2439300
MOSFETs 2439300
Infineon IRL100HS121

Infineon IRL100HS121

Supplier's Site
MOSFETs - 2439301P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2439301P
MOSFETs 2439301P
Infineon IRL100HS121

Infineon IRL100HS121

Supplier's Site
MOSFETs - 2439301 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2439301
MOSFETs 2439301
Infineon IRL100HS121

Infineon IRL100HS121

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278385-IRL100HS121 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278385-IRL100HS121
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278385-IRL100HS121
Win Source Part Number: 1278385-IRL100HS121 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 10µA Power Dissipation (Max): 11.5W (Tc) Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2) Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001592836,IRL100HS 121TR,IRL100HS121DKR ,IRL100HS121CT,IRL10 0HS121 Base Product Number: IRL100 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1278385-IRL100HS121
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Power Dissipation (Max): 11.5W (Tc)
Package / Case: 6-PowerVDFN
Supplier Device Package: 6-PQFN Dual (2x2)
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001592836,IRL100HS121TR,IRL100HS121DKR,IRL100HS121CT,IRL100HS121
Base Product Number: IRL100
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
100V 11A MOSFET Transistor
278-IRL100HS121
100V 11A MOSFET Transistor 278-IRL100HS121
MOSFET N-CH 100V 11A 6PQFN Product overview: IRL100HS121 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL100HS121 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 11A 6PQFN Product overview: IRL100HS121 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL100HS121 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 11A, 11.5W, Pqfn; Transistor Polarity Infineon - 93AC7146 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 11A, 11.5W, Pqfn; Transistor Polarity Infineon
93AC7146
Mosfet, N-Ch, 100V, 11A, 11.5W, Pqfn; Transistor Polarity Infineon 93AC7146
MOSFET, N-CH, 100V, 11A, 11.5W, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 11A, 11.5W, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL100HS121 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL100HS121
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL100HS121
MOSFET N-CH 100V 11A 6PQFN

MOSFET N-CH 100V 11A 6PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DIFFERENTIATED MOSFETS

MOSFET DIFFERENTIATED MOSFETS

Buy Now Datasheet
Single FETs, MOSFETs - IRL100HS121 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRL100HS121
Single FETs, MOSFETs IRL100HS121
MOSFET N-CH 100V 11A 6PQFN

MOSFET N-CH 100V 11A 6PQFN

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG DigiKey RS Components, Ltd. Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRL100HS121 IRL100HS121CT-ND 2439300 1278385-IRL100HS121 278-IRL100HS121 93AC7146 IRL100HS121 IRL100HS121 IRL100HS121
Product Name N-Channel Power MOSFET Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 100V 11A MOSFET Transistor Mosfet, N-Ch, 100V, 11A, 11.5W, Pqfn; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel; N N-Channel N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0420 ohms 0.0340 ohms
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type PG-TSDSON-6 6-PowerVDFN PQFN SOT3 Tape & Reel (TR) TO-3 6-PowerVDFN 6-PowerVDFN
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