Infineon Technologies AG Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
| Product Name | Notes |
|---|---|
| 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS package Hard-switching 1200 V, 50 A HighSpeed 3 H3 in TO-247PLUS 4pin package. Higher current capability, improved thermal behaviour, extended... | |
| 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a very... | |
| 1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package Hard-switching 1200 V, 75 A HighSpeed 3 H3 in TO-247 PLUS package with soft, fast recovery full current... | |
| 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode 650 V, 50A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in... | |
| 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode 650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in... | |
| 650 V, 75 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 75 A high speed TRENCHSTOP™ 5 S5 IGBT in TO-247-4 package with an extra Kelvin emitter... | |
| Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic,... | |
| Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power... | |
| Hard-switching 650 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Hard-switching 650 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant... | |
| Infineon’s L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of... | |
| To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin... |
| << Prev | Next >> |