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Infineon Technologies AG IGBT 600V 32A 140W TO220 IRGB4620DPBF

Description
IGBT 600V 32A 140W TO220
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Suppliers

Company
Product
Description
Supplier Links
IGBT 600V 32A 140W TO220 - 376-IRGB4620DPBF - Utmel Electronic Limited
Hong Kong, China
IGBT 600V 32A 140W TO220
376-IRGB4620DPBF
IGBT 600V 32A 140W TO220 376-IRGB4620DPBF
IGBT 600V 32A 140W TO220

IGBT 600V 32A 140W TO220

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IRGB4620DPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGB4620DPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGB4620DPBF
IGBT 600V 32A 140W TO220

IGBT 600V 32A 140W TO220

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IRGB4620DPBF
IGBT Transistors IRGB4620DPBF
IGBT Transistors 600V TRENCH IGBT ULTRAFAST

IGBT Transistors 600V TRENCH IGBT ULTRAFAST

Supplier's Site Datasheet
Single IGBTs - IRGB4620DPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGB4620DPBF-ND
Single IGBTs IRGB4620DPBF-ND
IGBT 600V 32A 140W Through Hole TO-220AC

IGBT 600V 32A 140W Through Hole TO-220AC

Supplier's Site Datasheet
 - 8793429P - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 32 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 140 W Package Type = TO-220AB Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 8 - 30kHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 32 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 140 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 8793429 - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 32 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 140 W Package Type = TO-220AB Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 8 - 30kHz Transistor Configuration = Single

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 32 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 140 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single

Supplier's Site
 - 1458895 - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 32 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 140 W Package Type = TO-220AB Mounting Type = Through Hole Channel Type = N Pin Count = 3 Switching Speed = 8 - 30kHz Transistor Configuration = Single

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 32 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 140 W
Package Type = TO-220AB
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single

Supplier's Site
IGBTs - Single - IRGB4620DPBF - 875214-IRGB4620DPBF - Win Source Electronics
Yishun, Singapore
IGBTs - Single - IRGB4620DPBF
875214-IRGB4620DPBF
IGBTs - Single - IRGB4620DPBF 875214-IRGB4620DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 875214-IRGB4620DPBF Operating Temperature Range: -40°C ~ 175°C (TJ) Features: IGBT - 600 V 32 A 140 W Through Hole TO-220AC Package: Tube Package: TO-220-3 Mounting: Through Hole Family Name: IRGB4620 Categories: Discrete Semiconductor Products Case / Package: TO-220AC ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited Quantity per package: 50 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Infineon Technologies
Win Source Part Number: 875214-IRGB4620DPBF
Operating Temperature Range: -40°C ~ 175°C (TJ)
Features: IGBT - 600 V 32 A 140 W Through Hole TO-220AC
Package: Tube
Package: TO-220-3
Mounting: Through Hole
Family Name: IRGB4620
Categories: Discrete Semiconductor Products
Case / Package: TO-220AC
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Supplier's Site Datasheet
 - IRGB4620DPBF - Rochester Electronics
Newburyport, MA, United States
IRGB4620D - IGBT with Anti-Parallel Diode

IRGB4620D - IGBT with Anti-Parallel Diode

Supplier's Site Datasheet
 - IRGB4620DPBF - Rochester Electronics
Newburyport, MA, United States
IRGB4620D - IGBT with Anti-Parallel Diode

IRGB4620D - IGBT with Anti-Parallel Diode

Supplier's Site Datasheet
Transistor, Bipolar, N Channel, 600V, To-220Ab; Continuous Collector Current Infineon - 43X7261 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, N Channel, 600V, To-220Ab; Continuous Collector Current Infineon
43X7261
Transistor, Bipolar, N Channel, 600V, To-220Ab; Continuous Collector Current Infineon 43X7261
TRANSISTOR, BIPOLAR, N CHANNEL, 600V, TO-220AB; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, N CHANNEL, 600V, TO-220AB; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED DigiKey RS Components, Ltd. Win Source Electronics Rochester Electronics Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors
Product Number 376-IRGB4620DPBF IRGB4620DPBF IRGB4620DPBF IRGB4620DPBF-ND 8793429P 875214-IRGB4620DPBF IRGB4620DPBF 43X7261
Product Name IGBT 600V 32A 140W TO220 Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Single IGBTs IGBTs - Single - IRGB4620DPBF Transistor, Bipolar, N Channel, 600V, To-220Ab; Continuous Collector Current Infineon
Polarity N-Channel; N-CHANNEL N-Channel
VCE(on) 1.55 volts
IC(max) 32 amps 32 amps 32000 milliamps
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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