1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package
Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a very soft and fast recovery full current anti-parallel diode is the responding to the market requirements for high efficiency and high current density in small discrete packages.
Summary of Features
High efficiency in hard switching and resonant topologies
Low saturation voltage if 1.85 V combined with low switching losses
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low EMI
Low Gate Charge QG
Very soft, fast recovery anti-parallel diode
High ruggedness, temperature stable behaviour
Very tight parameter distribution
High power density and low thermal resistance of the TO-247PLUS package
Benefits
Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
Kelvin emitter pin brings reduction of total switching losses
Applications
DIN rail power supplies
EV charging
General purpose motor drive - variating frequency and voltage
Uninterruptible power supplies (UPS)
1200 V, 75 A IGBT with anti-parallel diode in TO-247 PLUS package
Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 in a TO-247PLUS 4pin package co-packed with a very soft and fast recovery full current anti-parallel diode is the responding to the market requirements for high efficiency and high current density in small discrete packages.
Summary of Features
- High efficiency in hard switching and resonant topologies
- Low saturation voltage if 1.85 V combined with low switching losses
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Low Gate Charge QG
- Very soft, fast recovery anti-parallel diode
- High ruggedness, temperature stable behaviour
- Very tight parameter distribution
- High power density and low thermal resistance of the TO-247PLUS package
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor H3 technology
- High device reliability and lifetime expectancy
- Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
- Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
- Kelvin emitter pin brings reduction of total switching losses
Applications
- DIN rail power supplies
- EV charging
- General purpose motor drive - variating frequency and voltage
- Uninterruptible power supplies (UPS)
