IGBT 600V 52A 200W Through Hole TO-247AC
IGBT 600V 52A 200W TO247AC Product overview: IRG4PC50KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 52A, 200W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 52A, 200W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PC50KDPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1047314-IRG4PC50KDPB
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 50ns
Input Type: Standard
Gate Charge: 200nC
Family Name: IRG4PC50KD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 52A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 200W
Pulsed Collector Current: 104A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 30A
Total Switching Energy(Ets): 1.61mJ (on), 840μJ (off)
Turn-on and Turn-off delay time: 63ns/150ns
Testing Conditions: 480V, 30A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): IXSH30N60CD1SN; IXSH30N60A; APT15GP60BDLG; IXSK30N60BD1;
Introduction Date: May 04, 2004
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
IGBT 600V 52A 200W TO247AC
IRG4PC50 - DISCRETE IGBT WITH AN
IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
SINGLE IGBT, 600V, 52A; DC Collector Current:52A; Collector Emitter Saturation Voltage Vce(on):2.19V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes
IGBT 600V 52A 200W TO247AC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4PC50KDPBF-ND | 279-IRG4PC50KDPBF | 1047314-IRG4PC50KDPBF | IRG4PC50KDPBF | IRG4PC50KDPBF | IRG4PC50KDPBF | 63J7526 | IRG4PC50KDPBF |
| Product Name | Single IGBTs | 600V 52A 200W IGBT Transistor | IGBTs - Single - IRG4PC50KDPBF | Single IGBTs | Single IGBTs | IGBT Transistors | Single Igbt, 600V, 52A; Dc Collector Current Infineon | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) |
