Manufacturer: Infineon Technologies
Win Source Part Number: 205436-IRG7PH35UD1-E
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 130nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 179W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 620μJ (off)
Turn-on and Turn-off delay time: -/160ns
Testing Conditions: 600V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
IGBT 1200V 50A 179W TO247 Product overview: IRG7PH35UD1-E from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 179W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 179W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UD1-E can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 205436-IRG7PH35UD1-E | 279-IRG7PH35UD1-E |
| Product Name | IGBTs - Single - IRG7PH35UD1-E | 1200V 50A 179W IGBT Transistor |
| VCE(on) | 2.2 volts |