Infineon Technologies AG IGBTs - Single - IRG7PH35UD1-E IRG7PH35UD1-E

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205436-IRG7PH35UD1-E Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 130nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 179W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A Total Switching Energy(Ets): 620μJ (off) Turn-on and Turn-off delay time: -/160ns Testing Conditions: 600V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205436-IRG7PH35UD1-E Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 130nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 179W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A Total Switching Energy(Ets): 620μJ (off) Turn-on and Turn-off delay time: -/160ns Testing Conditions: 600V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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IGBTs - Single - IRG7PH35UD1-E - 205436-IRG7PH35UD1-E - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG7PH35UD1-E
205436-IRG7PH35UD1-E
IGBTs - Single - IRG7PH35UD1-E 205436-IRG7PH35UD1-E
Manufacturer: Infineon Technologies Win Source Part Number: 205436-IRG7PH35UD1-E Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Input Type: Standard Gate Charge: 130nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 179W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A Total Switching Energy(Ets): 620μJ (off) Turn-on and Turn-off delay time: -/160ns Testing Conditions: 600V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205436-IRG7PH35UD1-E
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 130nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 179W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 620μJ (off)
Turn-on and Turn-off delay time: -/160ns
Testing Conditions: 600V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
1200V 50A 179W IGBT Transistor
279-IRG7PH35UD1-E
1200V 50A 179W IGBT Transistor 279-IRG7PH35UD1-E
IGBT 1200V 50A 179W TO247 Product overview: IRG7PH35UD1-E from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 179W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 179W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UD1-E can be used for catalog matching and distributor lookup.

IGBT 1200V 50A 179W TO247 Product overview: IRG7PH35UD1-E from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 179W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 179W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UD1-E can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 205436-IRG7PH35UD1-E 279-IRG7PH35UD1-E
Product Name IGBTs - Single - IRG7PH35UD1-E 1200V 50A 179W IGBT Transistor
VCE(on) 2.2 volts
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