Infineon Technologies AG Single IGBTs IRG4BC30UPBF

Description
IGBT 600V 23A 100W TO220AB
Request a Quote Datasheet
Description
IGBT 600V 23A 100W TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRG4BC30UPBF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IRG4BC30UPBF
Single IGBTs IRG4BC30UPBF
IGBT 600V 23A 100W TO220AB

IGBT 600V 23A 100W TO220AB

Supplier's Site Datasheet
Single IGBTs - IRG4BC30UPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG4BC30UPBF-ND
Single IGBTs IRG4BC30UPBF-ND
IGBT 600V 23A 100W Through Hole TO-220AB

IGBT 600V 23A 100W Through Hole TO-220AB

Buy Now Datasheet
Singapore
N-Channel 23A 600V IGBT Transistor
279-IRG4BC30UPBF
N-Channel 23A 600V IGBT Transistor 279-IRG4BC30UPBF
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Product overview: IRG4BC30UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 23A, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC30UPBF can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Product overview: IRG4BC30UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 23A, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC30UPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
IRG4BC30UPBF
IGBT Transistors IRG4BC30UPBF
IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT

IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT

Buy Now Datasheet
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE - 70017064 - Allied Electronics, Inc.
Fort Worth, TX, USA
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE
70017064
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE 70017064
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE

600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE

Supplier's Site
IGBT - 66783671 - Radwell International
Willingboro, NJ, United States
IGBT, SINGLE TRANSISTOR, 600 V, 23 A, 100 W, THROUGH HOLE, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

IGBT, SINGLE TRANSISTOR, 600 V, 23 A, 100 W, THROUGH HOLE, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IRG4BC30UPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4BC30UPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4BC30UPBF
ULTRAFAST SPEED IGBT

ULTRAFAST SPEED IGBT

Supplier's Site
Single Igbt, 600V, 23A; Dc Collector Current Infineon - 63J7491 - Newark, An Avnet Company
Chicago, IL, United States
Single Igbt, 600V, 23A; Dc Collector Current Infineon
63J7491
Single Igbt, 600V, 23A; Dc Collector Current Infineon 63J7491
SINGLE IGBT, 600V, 23A; DC Collector Current:23A; Collector Emitter Saturation Voltage Vce(on):2.52V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

SINGLE IGBT, 600V, 23A; DC Collector Current:23A; Collector Emitter Saturation Voltage Vce(on):2.52V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Allied Electronics, Inc. Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG4BC30UPBF IRG4BC30UPBF-ND 279-IRG4BC30UPBF IRG4BC30UPBF 70017064 66783671 IRG4BC30UPBF 63J7491
Product Name Single IGBTs Single IGBTs N-Channel 23A 600V IGBT Transistor IGBT Transistors 600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE IGBT Discrete Semiconductor Products - Transistors - IGBTs Single Igbt, 600V, 23A; Dc Collector Current Infineon
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) ? to 150 C (? to 302 F)
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220 TO-3
Packing Method Tube Bulk; Bulk
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