Win Source Part Number: 1378654-IRGB4615DPBF
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Fake Threat In the Open Market: 59 pct.
Mfr: International Rectifier
Package: Tube
Product Status: Obsolete
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
HTSUS: 8541.29.0095
ECCN: EAR99
Test Condition: 400V, 8A, 47Ohm, 15V
Reverse Recovery Time (trr): 60 ns
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 99 W
Input Type: Standard
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Switching Energy: 70µJ (on), 145µJ (off)
Gate Charge: 19 nC
Td (on/off) @ 25°C: 30ns/95ns
IGBT 600V 23A 99W TO220 Product overview: IRGB4615DPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23A, 99W, TO220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 23A, 99W, TO220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGB4615DPBF can be used for catalog matching and distributor lookup.
Discrete IGBT with Anti-Parallel Diode
Discrete IGBT with Anti-Parallel Diode
IGBT 600V 23A 99W Through Hole TO-220AB
IGBT WITH RECOVERY DIODE
TRANSISTOR, BIPOLAR, N CHANNEL, 600V, TO-220AB; Continuous Collector Current:23A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:99W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors |
| Product Number | 1378654-IRGB4615DPBF | 279-IRGB4615DPBF | IRGB4615DPBF | IRGB4615DPBF-ND | IRGB4615DPBF | 43X7260 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | 600V 23A 99W TO220 IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Transistor, Bipolar, N Channel, 600V, To-220Ab; Continuous Collector Current Infineon | |
| VCES | 600 volts | |||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220COPAK | TO-220; TO-220-3 | TO-3; TO-220 | |
| Packing Method | Tube | Tube; Tube | Tube | Tube; Tube |
