IGBT 600V 75A 520W TO247AC
IGBT, 75A I(C), 600V V(BR)CES, N
Manufacturer: Infineon Technologies
Win Source Part Number: 119106-IRG4PC60UPBF
Packaging: Bulk
Mounting: Through Hole
Input Type: Standard
Gate Charge: 310nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 520W
Pulsed Collector Current: 300A
Collector-emitter saturation voltage(Max): 2V @ 15V, 40A
Total Switching Energy(Ets): 280μJ (on), 1.1mJ (off)
Turn-on and Turn-off delay time: 39ns/200ns
Testing Conditions: 480V, 40A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
IGBT 600V 75A 520W TO247AC Product overview: IRG4PC60UPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A, 520W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A, 520W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4PC60UPBF can be used for catalog matching and distributor lookup.
IGBT 600V 75A 520W Through Hole TO-247AC
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IGBT 600V 75A 520W TO247AC
MOSFET; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:600V; Power Dissipation:520W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRG4PC60UPBF | 119106-IRG4PC60UPBF | 279-IRG4PC60UPBF | IRG4PC60UPBF-ND | IRG4PC60UPBF | IRG4PC60UPBF | 63J7536 |
| Product Name | Single IGBTs | IGBTs - Single - IRG4PC60UPBF | 600V 75A 520W IGBT Transistor | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Mosfet; Continuous Collector Current Infineon |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
