Infineon Technologies AG IGBTs - Single - IRG7PH30K10D IRG7PH30K10D

Description
Manufacturer: Infineon Technologies Win Source Part Number: 205435-IRG7PH30K10D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 140ns IGBT Type: Trench Input Type: Standard Gate Charge: 45nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 180W Pulsed Collector Current: 27A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A Total Switching Energy(Ets): 530μJ (on), 380μJ (off) Turn-on and Turn-off delay time: 14ns/110ns Testing Conditions: 600V, 9A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 205435-IRG7PH30K10D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 140ns IGBT Type: Trench Input Type: Standard Gate Charge: 45nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 180W Pulsed Collector Current: 27A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A Total Switching Energy(Ets): 530μJ (on), 380μJ (off) Turn-on and Turn-off delay time: 14ns/110ns Testing Conditions: 600V, 9A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited
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IGBTs - Single - IRG7PH30K10D - 205435-IRG7PH30K10D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG7PH30K10D
205435-IRG7PH30K10D
IGBTs - Single - IRG7PH30K10D 205435-IRG7PH30K10D
Manufacturer: Infineon Technologies Win Source Part Number: 205435-IRG7PH30K10D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 140ns IGBT Type: Trench Input Type: Standard Gate Charge: 45nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 180W Pulsed Collector Current: 27A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A Total Switching Energy(Ets): 530μJ (on), 380μJ (off) Turn-on and Turn-off delay time: 14ns/110ns Testing Conditions: 600V, 9A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205435-IRG7PH30K10D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 45nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 27A
Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A
Total Switching Energy(Ets): 530μJ (on), 380μJ (off)
Turn-on and Turn-off delay time: 14ns/110ns
Testing Conditions: 600V, 9A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
1200V 30A 180W IGBT Transistor
279-IRG7PH30K10D
1200V 30A 180W IGBT Transistor 279-IRG7PH30K10D
IGBT 1200V 30A 180W TO247AC Product overview: IRG7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH30K10D can be used for catalog matching and distributor lookup.

IGBT 1200V 30A 180W TO247AC Product overview: IRG7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH30K10D can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 205435-IRG7PH30K10D 279-IRG7PH30K10D
Product Name IGBTs - Single - IRG7PH30K10D 1200V 30A 180W IGBT Transistor
VCE(on) 2.35 volts
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