Infineon Technologies AG Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
| Product Name | Notes |
|---|---|
| The Press Pack IGBT offers 2000 A with internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| The Press Pack IGBT offers 3000 A without internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips. Summary of Features Behavior in case of a failure Hermetically sealed housing... | |
| The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy... |
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