IGBT Trench 650V 85A 273W Through Hole PG-TO247-4
Win Source Part Number: 1277428-IKZ50N65EH5X
Category: Discrete Semiconductor Products>Transistors
Series: TrenchStop™ 5
Package: Tube
Standard Package: 30
Power - Max: 273 W
Reverse Recovery Time (trr): 53 ns
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Switching Energy: 410µJ (on), 190µJ (off)
Input Type: Standard
Gate Charge: 109 nC
Td (on/off) @ 25°C: 20ns/250ns
Test Condition: 400V, 25A, 12Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IKZ50N65EH5,SP001160
Base Product Number: IKZ50N65
IGBT 650V 50A CO-PACK TO-247-4 Product overview: IKZ50N65EH5XKSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IKZ50N65EH5XKSA1
IGBT 650V 50A CO-PACK TO-247-4
IGBT, 600V, 85A, 175DEG C, 273W ROHS COMPLIANT: YES
IGBT 650V 50A CO-PACK TO-247-4
IGBT Transistors IGBT PRODUCTS
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 448-IKZ50N65EH5XKSA1-ND | 1277428-IKZ50N65EH5XKSA1 | 279-IKZ50N65EH5XKSA1 | 2156677P | IKZ50N65EH5XKSA1 | 50AK1875 | IKZ50N65EH5XKSA1 | IKZ50N65EH5XKSA1 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | 650V 50A IGBT Transistor | IGBTs | Single IGBTs | Igbt, 600V, 85A, 175Deg C, 273W Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
