IGBT 1200V 50A 179W TO247 Product overview: IRG7PH35UD1PBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 179W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 179W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UD1PBF can be used for catalog matching and distributor lookup.
IGBT Trench 1200V 50A 179W Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 1040742-IRG7PH35UD1P
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 85nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 179W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 620μJ (off)
Turn-on and Turn-off delay time: -/160ns
Testing Conditions: 600V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 25
IGBT W/ULTRA-LOW VF DIODE FOR IN
IGBT 1200V 50A 179W TO247
IGBT,N CHANNEL,DIODE,1200V,
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IRG7PH35UD1PBF | IRG7PH35UD1PBF-ND | 1040742-IRG7PH35UD1PBF | IRG7PH35UD1PBF | IRG7PH35UD1PBF | 41T2864 |
| Product Name | 1200V 50A 179W IGBT Transistor | Single IGBTs | IGBTs - Single - IRG7PH35UD1PBF | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt,n Channel,diode,1200V,50A,to-247Ac; Continuous Collector Current Infineon |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | |
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | TO-3; TO-247 | |
| Packing Method | Tube | Tube | Rail; Tube; Tube/Rail | Tube; Tube | ||
| Structure | Trench |
