Manufacturer: Infineon Technologies
Win Source Part Number: 1040742-IRG7PH35UD1P
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench
Input Type: Standard
Gate Charge: 85nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 179W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 20A
Total Switching Energy(Ets): 620μJ (off)
Turn-on and Turn-off delay time: -/160ns
Testing Conditions: 600V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 25
IGBT Trench 1200V 50A 179W Through Hole TO-247AC
IGBT 1200V 50A 179W TO247 Product overview: IRG7PH35UD1PBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 179W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 179W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UD1PBF can be used for catalog matching and distributor lookup.
IGBT 1200V 50A 179W TO247
IGBT W/ULTRA-LOW VF DIODE FOR IN
IGBT,N CHANNEL,DIODE,1200V,
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1040742-IRG7PH35UD1PBF | IRG7PH35UD1PBF-ND | 279-IRG7PH35UD1PBF | IRG7PH35UD1PBF | IRG7PH35UD1PBF | 41T2864 |
| Product Name | IGBTs - Single - IRG7PH35UD1PBF | Single IGBTs | 1200V 50A 179W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs | Igbt,n Channel,diode,1200V,50A,to-247Ac; Continuous Collector Current Infineon |
| VCE(on) | 2.2 volts | |||||
| PD | 179000 milliwatts | 179000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | |
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | Tube | TO-247; TO-247-3 | TO-3; TO-247 |
