Infineon Technologies AG Discrete Semiconductor Products - Transistors - IGBTs - Single IRG4BC30FD1PBF

Description
Win Source Part Number: 1006607-IRG4BC30FD1P BF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Bulk Standard Package: 1 Power - Max: 100 W Reverse Recovery Time (trr): 46 ns Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 124 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Switching Energy: 370µJ (on), 1.42mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 22ns/250ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: International Rectifier Other Names: IFEIRFIRG4BC30FD1PBF ,2156-IRG4BC30FD1PBF
  • Discrete Semiconductor Products - Transistors - IGBTs - Single - 1006607-IRG4BC30FD1PBF - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - IRG4BC30FD1PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - IGBTs - IRG4BC30FD1PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1006607-IRG4BC30FD1P BF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Bulk Standard Package: 1 Power - Max: 100 W Reverse Recovery Time (trr): 46 ns Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 124 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Switching Energy: 370µJ (on), 1.42mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 22ns/250ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: International Rectifier Other Names: IFEIRFIRG4BC30FD1PBF ,2156-IRG4BC30FD1PBF
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Product
Description
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Discrete Semiconductor Products - Transistors - IGBTs - Single - 1006607-IRG4BC30FD1PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1006607-IRG4BC30FD1PBF
Discrete Semiconductor Products - Transistors - IGBTs - Single 1006607-IRG4BC30FD1PBF
Win Source Part Number: 1006607-IRG4BC30FD1P BF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Bulk Standard Package: 1 Power - Max: 100 W Reverse Recovery Time (trr): 46 ns Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 124 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Switching Energy: 370µJ (on), 1.42mJ (off) Input Type: Standard Gate Charge: 57 nC Td (on/off) @ 25°C: 22ns/250ns Test Condition: 480V, 17A, 23Ohm, 15V Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: International Rectifier Other Names: IFEIRFIRG4BC30FD1PBF ,2156-IRG4BC30FD1PBF

Win Source Part Number: 1006607-IRG4BC30FD1PBF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Bulk
Standard Package: 1
Power - Max: 100 W
Reverse Recovery Time (trr): 46 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Current - Collector Pulsed (Icm): 124 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Switching Energy: 370µJ (on), 1.42mJ (off)
Input Type: Standard
Gate Charge: 57 nC
Td (on/off) @ 25°C: 22ns/250ns
Test Condition: 480V, 17A, 23Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: International Rectifier
Other Names: IFEIRFIRG4BC30FD1PBF,2156-IRG4BC30FD1PBF

Buy Now Datasheet
Single IGBTs - IRG4BC30FD1PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG4BC30FD1PBF-ND
Single IGBTs IRG4BC30FD1PBF-ND
IGBT 600V 31A 100W Through Hole TO-220AB

IGBT 600V 31A 100W Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRG4BC30FD1PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG4BC30FD1PBF
Discrete Semiconductor Products - Transistors - IGBTs IRG4BC30FD1PBF
IGBT 600V 31A 100W TO220AB

IGBT 600V 31A 100W TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1006607-IRG4BC30FD1PBF IRG4BC30FD1PBF-ND IRG4BC30FD1PBF
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCES 600 volts
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