IGBT 600V 31A 100W Through Hole TO-220AB
Win Source Part Number: 1006607-IRG4BC30FD1P
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 100 W
Reverse Recovery Time (trr): 46 ns
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Current - Collector Pulsed (Icm): 124 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Switching Energy: 370µJ (on), 1.42mJ (off)
Input Type: Standard
Gate Charge: 57 nC
Td (on/off) @ 25°C: 22ns/250ns
Test Condition: 480V, 17A, 23Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: International Rectifier
Other Names: IFEIRFIRG4BC30FD1PBF
IGBT 600V 31A 100W TO220AB
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4BC30FD1PBF-ND | 1006607-IRG4BC30FD1PBF | IRG4BC30FD1PBF |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
