IGBT Trench 1200V 55A 210W Through Hole TO-247AC
INTERNATIONAL RECTIFIER IRG7PH35UPBF IGBT Single Transistor, 55 A, 1.9 V, 210 W, 1.2 kV, TO-247AC, 3 Pins Product overview: IRG7PH35UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55 A, 1.9 V, 210 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 55 A, 1.9 V, 210 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UPBF can be used for catalog matching and distributor lookup.
Win Source Part Number: 1196174-IRG7PH35UPBF
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 25
Power - Max: 210 W
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Switching Energy: 1.06mJ (on), 620µJ (off)
Input Type: Standard
Gate Charge: 85 nC
Td (on/off) @ 25°C: 30ns/160ns
Test Condition: 600V, 20A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001545868
Base Product Number: IRG7PH
Product Status: Obsolete
IGBT W/ULTRAFAST SOFT RECOVERY D
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG7PH35UPBF-ND | 279-IRG7PH35UPBF | 1196174-IRG7PH35UPBF | IRG7PH35UPBF |
| Product Name | Single IGBTs | 55 A 1.9 V 210 W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | ||
| Packing Method | Tube | Bulk; Bulk |