Infineon Technologies AG Single IGBTs IRG7PH35UPBF

Description
IGBT Trench 1200V 55A 210W Through Hole TO-247AC
Request a Quote Datasheet
Description
IGBT Trench 1200V 55A 210W Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRG7PH35UPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG7PH35UPBF-ND
Single IGBTs IRG7PH35UPBF-ND
IGBT Trench 1200V 55A 210W Through Hole TO-247AC

IGBT Trench 1200V 55A 210W Through Hole TO-247AC

Buy Now Datasheet
Singapore
55 A 1.9 V 210 W IGBT Transistor
279-IRG7PH35UPBF
55 A 1.9 V 210 W IGBT Transistor 279-IRG7PH35UPBF
INTERNATIONAL RECTIFIER IRG7PH35UPBF IGBT Single Transistor, 55 A, 1.9 V, 210 W, 1.2 kV, TO-247AC, 3 Pins Product overview: IRG7PH35UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55 A, 1.9 V, 210 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 55 A, 1.9 V, 210 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UPBF can be used for catalog matching and distributor lookup.

INTERNATIONAL RECTIFIER IRG7PH35UPBF IGBT Single Transistor, 55 A, 1.9 V, 210 W, 1.2 kV, TO-247AC, 3 Pins Product overview: IRG7PH35UPBF from International Rectifier is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55 A, 1.9 V, 210 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 55 A, 1.9 V, 210 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1196174-IRG7PH35UPBF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1196174-IRG7PH35UPBF
Discrete Semiconductor Products - Transistors - IGBTs - Single 1196174-IRG7PH35UPBF
Win Source Part Number: 1196174-IRG7PH35UPBF Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Tube Standard Package: 25 Power - Max: 210 W IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 55 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85 nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001545868 Base Product Number: IRG7PH Product Status: Obsolete

Win Source Part Number: 1196174-IRG7PH35UPBF
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 25
Power - Max: 210 W
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 55 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Switching Energy: 1.06mJ (on), 620µJ (off)
Input Type: Standard
Gate Charge: 85 nC
Td (on/off) @ 25°C: 30ns/160ns
Test Condition: 600V, 20A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001545868
Base Product Number: IRG7PH
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IRG7PH35UPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRG7PH35UPBF
Discrete Semiconductor Products - Transistors - IGBTs IRG7PH35UPBF
IGBT W/ULTRAFAST SOFT RECOVERY D

IGBT W/ULTRAFAST SOFT RECOVERY D

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG7PH35UPBF-ND 279-IRG7PH35UPBF 1196174-IRG7PH35UPBF IRG7PH35UPBF
Product Name Single IGBTs 55 A 1.9 V 210 W IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247-3 TO-247; SOT3
Packing Method Tube Bulk; Bulk
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