Infineon Technologies AG Single IGBTs IRG7PH35UDPBF

Description
IGBT Trench 1200V 50A 180W Through Hole TO-247AC
Request a Quote Datasheet
Description
IGBT Trench 1200V 50A 180W Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRG7PH35UDPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRG7PH35UDPBF-ND
Single IGBTs IRG7PH35UDPBF-ND
IGBT Trench 1200V 50A 180W Through Hole TO-247AC

IGBT Trench 1200V 50A 180W Through Hole TO-247AC

Buy Now Datasheet
Single IGBTs - IRG7PH35UDPBF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
IRG7PH35UDPBF
Single IGBTs IRG7PH35UDPBF
IRG7PH35 - DISCRETE IGBT WITH AN

IRG7PH35 - DISCRETE IGBT WITH AN

Supplier's Site Datasheet
IGBTs - Single - IRG7PH35UDPBF - 1188324-IRG7PH35UDPBF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IRG7PH35UDPBF
1188324-IRG7PH35UDPBF
IGBTs - Single - IRG7PH35UDPBF 1188324-IRG7PH35UDPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1188324-IRG7PH35UDPB F Packaging: Tube Mounting Style: Through Hole Reverse Recovery Time (trr): 105ns IGBT Type: Trench Current - Collector Pulsed (Icm): 60A Switching Energy: 1.06mJ (on), 620μJ (off) Input Type: Standard Gate Charge: 85nC Test Condition: 600V, 20A, 10Ohm, 15V Categories: Discrete Semiconductor Products Supplier Device Package: TO-247AC Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-247-3 Current - Collector (Ic) (Maximum): 50A Voltage - Collector Emitter Breakdown (Maximum): 1200V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Maximum Power: 180W Vce(on) (Maximum) at Vge, Ic: 2.2V at 15V, 20A Td (on/off) at 25°C: 30ns/160ns

Manufacturer: Infineon Technologies
Win Source Part Number: 1188324-IRG7PH35UDPBF
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 105ns
IGBT Type: Trench
Current - Collector Pulsed (Icm): 60A
Switching Energy: 1.06mJ (on), 620μJ (off)
Input Type: Standard
Gate Charge: 85nC
Test Condition: 600V, 20A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AC
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 50A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Maximum Power: 180W
Vce(on) (Maximum) at Vge, Ic: 2.2V at 15V, 20A
Td (on/off) at 25°C: 30ns/160ns

Buy Now
Sheung Wan, Hong Kong
IGBT Transistors
IRG7PH35UDPBF
IGBT Transistors IRG7PH35UDPBF
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - IGBTs - IRG7PH35UDPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - IGBTs
IRG7PH35UDPBF
Integrated Circuits (ICs) - Transistors - IGBTs IRG7PH35UDPBF
Integrated Circuits (ICs) - Transistors - IGBTs

Integrated Circuits (ICs) - Transistors - IGBTs

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRG7PH35UDPBF-ND IRG7PH35UDPBF 1188324-IRG7PH35UDPBF IRG7PH35UDPBF IRG7PH35UDPBF
Product Name Single IGBTs Single IGBTs IGBTs - Single - IRG7PH35UDPBF IGBT Transistors Integrated Circuits (ICs) - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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