IGBT Trench 1200V 50A 180W Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 1188324-IRG7PH35UDPB
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 105ns
IGBT Type: Trench
Current - Collector Pulsed (Icm): 60A
Switching Energy: 1.06mJ (on), 620μJ (off)
Input Type: Standard
Gate Charge: 85nC
Test Condition: 600V, 20A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AC
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Current - Collector (Ic) (Maximum): 50A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Maximum Power: 180W
Vce(on) (Maximum) at Vge, Ic: 2.2V at 15V, 20A
Td (on/off) at 25°C: 30ns/160ns
IGBT TRENCH 1200V 50A TO247AC Product overview: IRG7PH35UDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG7PH35UDPBF can be used for catalog matching and distributor lookup.
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Integrated Circuits (ICs) - Transistors - IGBTs
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG7PH35UDPBF-ND | 1188324-IRG7PH35UDPBF | 279-IRG7PH35UDPBF | IRG7PH35UDPBF | IRG7PH35UDPBF | IRG7PH35UDPBF |
| Product Name | Single IGBTs | IGBTs - Single - IRG7PH35UDPBF | 1200V 50A IGBT Transistor | Single IGBTs | IGBT Transistors | Integrated Circuits (ICs) - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | Tube | TO-247; TO-247-3 | ||
| Packing Method | Tube | Tube; Tube | Tube |