Manufacturer: Infineon Technologies
Win Source Part Number: 134488-IRGB14C40LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Logic
Gate Charge: 27nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 125W
Collector-emitter saturation voltage(Max): 1.75V @ 5V, 14A
Turn-on and Turn-off delay time: 900ns/6μs
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
IGBT 430V 20A 125W Through Hole TO-220AB
IGBT 430V 20A TO220AB Product overview: IRGB14C40LPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 430V, 20A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 430V, 20A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRGB14C40LPBF can be used for catalog matching and distributor lookup.
IGBT Transistors 430V LO-VCEON DISCRETE IGBT
IGBT 430V 20A TO220AB
SINGLE IGBT, 430V, 20A; Continuous Collector Current:20A; Power Dissipation:125W; Collector Emitter Voltage Max:430V; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; MSL:- RoHS Compliant: Yes
430V LOW-VCEON DISCRETE IGBT IN A TO-220AB PACKAGE
IRGB14C40 - DISCRETE IGBT WITHOU
IGBT, TO-220AB, SINGLE, 20 A, 430 V, THROUGH HOLE, N- CHANNEL, 10.54 X 4.69 X 15.24 MM. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Allied Electronics, Inc. | ODG (Origin Data Global) | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 134488-IRGB14C40LPBF | IRGB14C40LPBF-ND | 279-IRGB14C40LPBF | IRGB14C40LPBF | IRGB14C40LPBF | 63J7438 | 70017509 | IRGB14C40LPBF | 17463147 |
| Product Name | IGBTs - Single - IRGB14C40LPBF | Single IGBTs | 430V 20A IGBT Transistor | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 430V, 20A; Continuous Collector Current Infineon | 430V LOW-VCEON DISCRETE IGBT IN A TO-220AB PACKAGE | Single IGBTs | Transistor |
| VCE(on) | 1.75 volts | 1.2 volts | |||||||
| PD | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ? to 175 C (? to 347 F) | -40 to 175 C (-40 to 347 F) |
