Single IGBT in a TO-247-4 package with a 650 V collector-emitter voltage and 40 A continuous collector current, designed for high-speed switching and low saturation voltage using TRENCHSTOP IGBT7 technology, and copacked with a soft, fast-recovery emitter-controlled diode. The device has a junction-to-case thermal resistance of 0.54 to 0.71 K/W for the IGBT and is qualified for industrial applications according to JEDEC JESD47/20/22.
IGBT TRENCH FS 650V 80A TO247-4
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 448-IKZA40N65EH7XKSA1-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |
