IGBT 600V 9A 38W Through Hole TO-220AB
IGBT 600V 9A 38W TO220AB Product overview: IRG4BC10KDPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A, 38W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 9A, 38W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC10KDPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 130656-IRG4BC10KDPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 19nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 9A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 38W
Pulsed Collector Current: 18A
Collector-emitter saturation voltage(Max): 2.62V @ 15V, 5A
Total Switching Energy(Ets): 250μJ (on), 140μJ (off)
Turn-on and Turn-off delay time: 49ns/97ns
Testing Conditions: 480V, 5A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
IGBT 600V 9A 38W TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4BC10KDPBF-ND | 279-IRG4BC10KDPBF | 130656-IRG4BC10KDPBF | IRG4BC10KDPBF |
| Product Name | Single IGBTs | 600V 9A 38W IGBT Transistor | IGBTs - Single - IRG4BC10KDPBF | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |