IGBT 600V 13A 60W Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1047285-IRG4BC20UPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 27nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 52A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 6.5A
Total Switching Energy(Ets): 100μJ (on), 120μJ (off)
Turn-on and Turn-off delay time: 21ns/86ns
Testing Conditions: 480V, 6.5A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
IGBT 600V 13A 60W TO220AB Product overview: IRG4BC20UPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 13A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC20UPBF can be used for catalog matching and distributor lookup.
TRANSISTOR, SINGLE IGBT, 600V, 13A, DC COLLECTOR CURRENT 13A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON) 2.27V, POWER DISSIPATION PD 60W. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V 13A 60W TO220AB
SINGLE IGBT, 600V, 13A; Continuous Collector Current:13A; Power Dissipation:60W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:IRG4 Series; MSL:- RoHS Compliant: Yes
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4BC20UPBF-ND | 1047285-IRG4BC20UPBF | 279-IRG4BC20UPBF | 17307753 | IRG4BC20UPBF | 63J7482 | 70017062 |
| Product Name | Single IGBTs | IGBTs - Single - IRG4BC20UPBF | 600V 13A 60W IGBT Transistor | Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 600V, 13A; Continuous Collector Current Infineon | 600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-3 | TO-220 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube |
