Infineon Technologies AG Power - IGBT - IGBT Discretes - IKY75N120CH7 IKY75N120CH7

Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. Summary of Features Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology Fast switching behavior with low EMI emissions Optimized diode for target applications, very soft and low Qrr Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior Offering Tj(max) of 175 °C Benefits Technology with the highest power density with up to 140 A rating Optimized performance in application conditions Lowest conduction losses Lowest switching losses Humidity robustness under harsh environment Improved EMI performance Highest power density with heat dissipation capability of TO-247PLUS vs TO-247 Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin Applications 1-phase string inverter solutions Energy Storage Systems EV charging Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with BSC014N06NS | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs IKZ75N65ES5 | IGBT discretes IMZA120R030M1H | Silicon Carbide MOSFET Discretes BSC014N06NS | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs IKZ75N65ES5 | IGBT discretes IMZA120R030M1H | Silicon Carbide MOSFET Discretes BSC014N06NS | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs IKZ75N65ES5 | IGBT discretes IMZA120R030M1H | Silicon Carbide MOSFET Discretes