IGBT 600V 23A 100W Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 135333-IRG4BC30WPBF
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 51nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 23A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 100W
Pulsed Collector Current: 92A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 12A
Total Switching Energy(Ets): 130μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 25ns/99ns
Testing Conditions: 480V, 12A, 23 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
IGBT 600V 23A 100W TO220AB Product overview: IRG4BC30WPBF from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23A, 100W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 23A, 100W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IRG4BC30WPBF can be used for catalog matching and distributor lookup.
IGBT 600V 23A 100W TO220AB
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600V WARP 60-150 KHZ DISCRETE IG
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IRG4BC30WPBF-ND | 135333-IRG4BC30WPBF | 279-IRG4BC30WPBF | 376-IRG4BC30WPBF | IRG4BC30WPBF | IRG4BC30WPBF |
| Product Name | Single IGBTs | IGBTs - Single - IRG4BC30WPBF | 600V 23A 100W IGBT Transistor | IGBT 600V 23A 100W TO220AB | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | |||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Bulk; Bulk | |
| VCE(on) | 2.7 volts | 2.7 volts | ||||
| PD | 100000 milliwatts | 100000 milliwatts |
